Doping Nature of Group V Elements in ZnO Single Crystals Grown from Melts at High Pressure

被引：7

作者：

Taibarei, Nikolai O. ^{[1
]}

Kytin, Vladimir G. ^{[2
]}

Konstantinova, Elizaveta A. ^{[2
]}

Kulbachinskii, Vladimir A. ^{[2
]}

Shalygina, Olga A. ^{[2
]}

Pavlikov, Alexander V. ^{[2
]}

Savilov, Serguei V. ^{[1
]}

Tafeenko, Viktor A. ^{[1
]}

Mukhanov, Vladimir A. ^{[3
]}

Solozhenko, Vladimir L. ^{[3
]}

Baranov, Andrei N. ^{[1
]}

机构：

[1] Lomonosov Moscow State Univ, Dept Chem, Moscow 119991, Russia

[2] Lomonosov Moscow State Univ, Dept Phys, Moscow 119991, Russia

[3] Univ Sorbonne Paris Nord, CNRS, LSPM, F-93430 Villetaneuse, France

来源：

CRYSTAL GROWTH & DESIGN | 2022年 / 22卷 / 04期

关键词：

THIN-FILMS; PHOTOLUMINESCENCE; RESONANCE; CENTERS;

D O I：

10.1021/acs.cgd.1c01507

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Herein, ZnO single crystals doped with group V elements have been grown from melts at high pressure. Dopants were introduced in several forms such as Sb2O3, P, As, Sb, and Zn3X2 (X = P, As, Sb) in a high-pressure cell. Systematic studies of morphology were performed using optical microscopy and scanning electron microscopy. The crystal structure and lattice parameters were studied using X-ray diffraction and X-ray crystallography. Crystals exhibited distinct changes in size, shape, and color compared to undoped ZnO melt-grown single crystals due to the dopant influence. X-ray photoelectron spectroscopy was used to determine the valence states of group V elements when incorporated in the ZnO lattice. Photoluminescence spectroscopy, Raman spectroscopy, and electron paramagnetic resonance spectroscopy were employed to investigate the nature of defects formed as a result of doping. The formation of V-Zn and V-Zn complexes was confirmed, and their concentrations were measured. Estimates of the number of V-Zn per dopant atom showed that the ratio is noticeably higher than the one suggested for the shallow complex As(P,Sb)(Zn)-2V(Zn) commonly regarded as responsible for acceptor properties in ZnO.

引用

页码：2452 / 2461

页数：10

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