Chemical and Electrical Properties of Low-Temperature Solution-Processed InGaZn-O Thin-Film Transistors

被引：41

作者：

Yang, Ya-Hui ^{[1
]}

Yang, Sidney S. ^{[1
]}

Kao, Chen-Yen ^{[2
]}

Chou, Kan-San ^{[2
]}

机构：

[1] Natl Tsing Hua Univ, Inst Photon Technol, Hsinchu 30013, Taiwan

[2] Natl Tsing Hua Univ, Dept Chem Engn, Hsinchu 30013, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 04期

关键词：

Indium-gallium-zinc oxide (IGZO); metal-insulator-oxide-semiconductor devices; solution-processed; thin-film transistors (TFTs); OXIDE; GROWTH; LAYER;

D O I：

10.1109/LED.2010.2041425

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated a bottom-gate thin-film transistor (TFT) with the active layer of indium-gallium-zinc-oxide (IGZO) nanoparticles prepared from water solution. Polycrystallized InGaZn2O5 films were formed by a spin-coating method and postbaked at low temperature (95 degrees C). The morphology of the IGZO film indicates that not only are the grain size and shape uniform but also the cross section of the film appears dense, considering that the films were fabricated by a solution process at low temperature. The TFT device shows good switching ability, high drain current (> 105 A), and low threshold voltage (0.9 V). Its field-effect mobility of 2.3 cm(2)/V.s and ON-OFF current ratio over 106 are very promising for TFT applications.

引用

页码：329 / 331

页数：3

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