Threshold fields in the dc bias dependence of dielectric responses of relaxor ferroelectric terpolymer films

被引:9
作者
Meng, X. J. [1 ]
Dkhil, B. [2 ]
Liu, P. F. [1 ,2 ]
Wang, J. L. [1 ]
Sun, J. L. [1 ]
Chu, J. H. [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[2] CNRS, UMR 8580, Ecole Cent Paris, Lab Struct Proprietes & Modelisat Solides SPMS, F-92290 Chatenay Malabry, France
基金
上海市自然科学基金;
关键词
ELECTRIC-FIELD; PHASE-TRANSITIONS; BEHAVIOR; VISCOSITY; CRYSTALS; POLYMERS;
D O I
10.1063/1.3259375
中图分类号
O59 [应用物理学];
学科分类号
摘要
The dc bias dependence of dielectric properties has been investigated for poly (vinylindene fluoride-trifluoroethylene-chlorofluoroethylene) relaxor terpolymer films. The frequency dependence of the temperature of the permittivity maximum, T-m, was analyzed using the Vogel-Fulcher (VF) relation. Two threshold fields, similar to 30 and 160 MV/m were found in the electric-field dependence of T-m. T-m shows a minimum at similar to 30 MV/m and a maximum at similar to 160 MV/m. The VF parameters activation energy E-a and freezing temperature T-f respectively show a maximum and a minimum at similar to 25 MV/m. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3259375]
引用
收藏
页数:4
相关论文
共 32 条
  • [31] Dielectric property and energy-storage performance of (100)-preferred (1-x)PbTiO3-xBi(Mg0.5Ti0.5)O3 relaxor ferroelectric thin films
    Wang, Chao
    Sun, Ningning
    Li, Yong
    Hao, Xihong
    JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 810
  • [32] Estimation of intrinsic contribution to dielectric response of Pb0.92La0.08Zr0.52Ti0.48O3 thin films at low frequencies using high bias fields
    Narayanan, Manoj
    Tong, Sheng
    Liu, Shanshan
    Ma, Beihai
    Balachandran, Uthamalingam
    APPLIED PHYSICS LETTERS, 2013, 102 (06)