Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100 cm2 V-1 s-1)

被引：124

作者：

Taniyasu, Y ^{[1
]}

Kasu, M ^{[1
]}

Makimoto, T ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 20期

关键词：

D O I：

10.1063/1.1824181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For n-type Si-doped AlN, we have obtained an electron mobility and concentration of 125 cm(2) V-1 s(-1) and 1.75x10(15) cm(-3) at 300 K, respectively. At 250 K, the mobility reached the maximum of 141 cm(2) V(-1)s(-1). To explain the temperature dependence of the mobility, we calculated mobilities limited by specific scattering mechanisms. We found that the mobility is limited by neutral impurity scattering rather than ionized impurity scattering or lattice scattering because of a large donor ionization energy (similar to250 meV). (C) 2004 American Institute of Physics.

引用

页码：4672 / 4674

页数：3

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Electrical conduction properties of n-type Si-doped AlN with high electron mobility (&gt;100 cm2 V-1 s-1)

Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100 cm2 V-1 s-1)