Pulsed laser deposition of Sr2FeMoO6 thin films grown on spark plasma sintered Sr2MgWO6 substrates

被引:11
|
作者
Santosh, M. [1 ]
Lacotte, M. [1 ]
David, A. [1 ]
Boullay, Ph [1 ]
Grygiel, C. [2 ]
Pravarthana, D. [1 ]
Rohrer, G. S. [3 ]
Salvador, P. A. [3 ]
Padhan, P. [4 ]
Luders, U. [1 ]
Wang, Junling [5 ]
Prellier, W. [1 ]
机构
[1] Normandie Univ, ENSICAEN, CNRS UMR 6508, Lab CRISMAT, 6 Bd Marechal Juin, F-14050 Caen 4, France
[2] Normandie Univ, ENSICAEN, CNRS UMR 6252, Lab CIMAP,CEA, 6 Bd Marechal Juin, F-14050 Caen 4, France
[3] Carnegie Mellon Univ, Dept Mat Sci & Engn, 5000 Forbes Ave, Pittsburgh, PA 15213 USA
[4] Indian Inst Technol, Dept Phys, Madras, Tamil Nadu, India
[5] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore, Singapore
基金
美国国家科学基金会;
关键词
thin films; oxides; pulsed laser deposition; DOUBLE-PEROVSKITE SR2FEMOO6; MAGNETIC-PROPERTIES; ELECTRONIC-PROPERTIES; MAGNETORESISTANCE; CRYSTAL; OXIDE; BA; DISORDER; DEFECTS; PHASE;
D O I
10.1088/1361-6463/aa6e3e
中图分类号
O59 [应用物理学];
学科分类号
摘要
Sr2FeMoO6 (SFMO) films were deposited on polycrystalline spark plasma synthesized Sr2FeMoO6 (SMWO) substrates. Films were grown using pulsed laser deposition at temperatures (T-dep) between 720 degrees C and 820 degrees C in a vacuum environment of pressure P-dep = 10(-6) mbar (0.1 mPa); after deposition they were cooled either in a pressure P-cool = P-dep or P-cool = 10(-4) mbar (10 mPa) O-2. Despite the use of an isostructural substrate, the growth and cooling conditions play the primary role in determining details of the films' structures and properties, similarly to single-crystals. Grazing x-ray and electron back-scatter diffraction indicate that vacuum-cooled films were pure perovskite-structured SFMO exhibiting grainover-grain growth that aligned the perovskite sub-cells. SrMoO4 impurities were observed in the x-ray patterns for the oxygen-cooled films similarly to single-crystal substrates. Magnetic, electronic and magnetoresistive properties were all a function of growth and cooling environments. The Curie temperature and magnetization of the films increased with Tdep up to 800 degrees C. The vacuum-cooled films had low-resistivities with essentially metallic conductivity (small resistivity increases occurred at low-T),while the conductivity of oxygen-cooled films were consistent with variable range hopping. The oxygen-cooled films had higher low-field magnetoresistance effects at 5 K than the vacuum-cooled films, which seems consistent with SrMoO4 forming at grain boundaries. This work opens the route to tailor the electronic properties by engineering the grain boundaries in thin films.
引用
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页数:9
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