Influence of top contact topology on detection properties of semi-insulating GaAs detectors

被引：8

作者：

Perd'ochová, A

Necas, V

Anh, TL

Dubecky, F

Bohácek, P

Sekácová , M

Pavlicová, V

机构：

[1] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, SK-81219 Bratislava, Slovakia

[2] Slovak Acad Sci, Inst Elect Engn, SK-84104 Bratislava, Slovakia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2004年 / 531卷 / 1-2期

关键词：

SIGaAs detector; contact topology; gamma irradiation; detection performance; digital radiography;

D O I：

10.1016/j.nima.2004.05.101

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Results are presented of an experimental study of detectors based on LEC SI GaAs with various top Schottky contact arrangements. The study is concentrated on an improvement of relative detection efficiency, as an important detection property of detectors considered for application in digital radiography. The current-voltage and pulse height spectra measurements at 295 K using Am-241 and Co-57 gamma sources are demonstrated. Following the application of the detectors in digital radiology systems, the detector properties, such as leakage current, breakdown voltage, charge collection efficiency, relative energy resolution, peak to valley ratio, and relative detection efficiency are evaluated. Improvement of overall detector properties with decreasing top contact area ("small pixel effect") is presented, and consequendy it is shown that the connecting of more pixels into the top contact led to an increase of the relative detection efficiency. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：103 / 110

页数：8

共 14 条

[1] Performance of a medical imaging system for photons in the 60-140 keV energy range [J].

Amendolia, SR ;

Bisogni, MG ;

Bottigli, U ;

Ceccopieri, A ;

Delogu, P ;

Dipasquale, G ;

Fantacci, ME ;

Maestro, P ;

Marchi, A ;

Oliva, P ;

Palmiero, R ;

Pernigotti, E ;

Rosso, V ;

Stefanini, A ;

Stumbo, S .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 461 (1-3) :422-424

[2]

Anh TL, 2002, 2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, P292

[3] Spectroscopic performance of semi-insulating GaAs detectors for digital radiography [J].

Bertolucci, E ;

Conti, M ;

Mettivier, G ;

Russo, P ;

Cola, A ;

Quaranta, F ;

Vasanelli, L ;

Bisogni, MG ;

Bottigli, U ;

Fantacci, ME ;

Stefanini, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1999, 422 (1-3) :247-251

[4] Energy resolution in GaAs X- and γ-ray detectors [J].

Bertuccio, G ;

Canali, C ;

Nava, F .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1998, 410 (01) :29-35

[5]

Cadeddu S, 1998, PHYS MEDICA, V14, P23

[6] Reverse current in SI GaAs pixel detectors [J].

Cola, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1998, 410 (01) :85-91

[7] The semi-insulating GaAs-based particle detector at IEE SAS:: first imaging results [J].

Darmo, J ;

Dubecky, F ;

Zat'ko, B ;

Bohácek, P ;

Sekácová, M ;

Kvitkovic, J ;

Necas, V ;

Pelfer, PG .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 458 (1-2) :418-421

[8]

Dubecky F, 2002, 2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, P258

[9]

DUBECKY F, 2004, NUCL INSTR METH A

[10] GALLIUM ARSENIDE FOR GAMMA-RAY SPECTROSCOPY [J].

HARDING, WR ;

HILSUM, C ;

MONCASTER, ME ;

NORTHROP, DC ;

SIMPSON, O .

NATURE, 1960, 187 (4735) :405-405

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