Boron-mediated growth of Ge quantum dots on Si(100) substrate

被引：10
作者：
Zhou, XF
Shi, B
Jiang, ZM [1 ]
Jiang, WR
Hu, DZ
Gong, DW
Fana, YL
Zhang, XJ
Wang, X
Li, YS
机构：
[1] Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China
[2] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China
来源：
THIN SOLID FILMS | 2000年 / 369卷 / 1-2期
基金：
中国国家自然科学基金;
关键词：
quantum dots; molecular beam epitaxy; boron-mediated growth;
D O I：
10.1016/S0040-6090(00)00842-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The influence of boron atoms on the growth of self-organized Ge quantum dots (QDs) on Si(100) substrate is studied by atomic force microscopy (AFM). The boron coverage varied from 0 monolayers (ML) to 0.3 ML. AFM observation shows that the boron atoms have a great influence on the size, uniformity and the density of Ge QDs. In the presence of 0.2 ML of boron atoms, the growth of quite uniform Ge QDs is achieved with a mean base diameter of 60 nm and areal density of 6 x 10(9) cm(-2). The mechanism of B atom influence on the growth of Ge QDs is discussed. (C) 2000 Elsevier Science S.A. All rights reserved.
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页码：92 / 95
页数：4
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