Thermal oxidation of III-V materials and heterostructures

被引：0

作者：

Hussey, RJ ^{[1
]}

Driad, R ^{[1
]}

Sproule, GI ^{[1
]}

Moisa, S ^{[1
]}

Fraser, JW ^{[1
]}

Wasilewski, ZR ^{[1
]}

McCaffrey, JP ^{[1
]}

Landheer, D ^{[1
]}

Graham, MJ ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

CORROSION AND CORROSION PROTECTION | 2001年 / 2001卷 / 22期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Thermal oxide films formed on GaAs and AlGaAs from 450-500 degreesC have been characterized by AES, XPS, TEM and SEM, and the relative oxidation rates of AlGaAs in GaAs-based heterostructures and InAlAs in InP-based heterostructures have been determined. The kinetics and mechanism of oxidation depend on the particular oxidant. Selective oxidation of Al-containing layers in device structures depends on the layer thickness but is independent of the dopant level, and is optimized by oxidation in moist nitrogen (95 degreesC). Electrical measurements have been performed on oxidized InAlAs/InGaAs heterostructure diodes.

引用

页码：645 / 654

页数：10

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