Effective Suppression of Current Collapse in AlGaN/GaN HEMT With N2O Plasma Treatment Followed by High Temperature Annealing in N2 Ambience

被引：8

作者：

Chen, Jingxiong ^{[1
,2
]}

Qin, Jian ^{[1
,3
]}

Xiao, Wenxuan ^{[1
,2
]}

Wang, Hong ^{[1
,2
,4
]}

机构：

[1] South China Univ Technol, Engn Res Ctr Optoelect Guangdong Prov, Guangzhou 510640, Peoples R China

[2] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Peoples R China

[3] Guangzhou Univ, Dept Elect & Commun Engn, Guangzhou 510006, Peoples R China

[4] South China Univ Technol, Zhongshan Inst Modern Ind Technol, Zhongshan 528437, Peoples R China

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2022年 / 10卷

关键词：

AlGaN/GaN HEMT; N2O plasma treatment; current collapse; high temperature annealing; GATE; PASSIVATION; SIO2;

D O I：

10.1109/JEDS.2022.3169811

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a high temperature annealing process in N-2 ambience after N2O plasma treatment for AlGaN/GaN HEMT. The annealing process effectively improves the plasma treated surface condition and decreases the current collapse from 41.7% to 10.6%. The N2O plasma treatment is performed in a PECVD chamber and the followed high temperature annealing process is carried out at 800 degrees C for 20min in rapid temperature annealing (RTA) system. Compared to the devices with only N2O plasma treatment, the devices with an extra high temperature annealing process perform lower surface state density (2.51E+12 cm(-2) eV(-1), Delta E from 0.353 eV to 0.413 eV; 5.38E+11 cm(-2), Delta E > 0.519 eV) and better dynamic characteristics.

引用

页码：356 / 360

页数：5

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