p-Type Optoelectronic and Transparent Conducting Oxide Properties of Delafossite CuAl1/2Fe1/2O2

被引：11

作者：

Ruttanapun, Chesta ^{[1
]}

Jindajitawat, Phumin ^{[1
]}

Buranasiri, Prathan ^{[1
]}

Harnwunggmoung, Adul ^{[2
]}

Charoenphakdee, Anek ^{[2
]}

Amornkitbamrung, Vittaya ^{[3
]}

机构：

[1] King Mongkuts Inst Technol Ladkrabang, Dept Phys, Fac Sci, Bangkok 10520, Thailand

[2] Rajamangala Univ Technol Suvarnabhumi, Fac Sci & Technol, Thermoelect & Nanotechnol Res Ctr, Asian Highway 13000, Huntra Phranakh, Thailand

[3] Khon Kaen Univ, Dept Phys, Integrated Nanotechnol Res Ctr, Fac Sci, Khon Kaen 40002, Thailand

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2015年 / 98卷 / 02期

关键词：

ELECTRICAL-PROPERTIES; THIN-FILMS; DEPOSITION; TRANSPORT;

D O I：

10.1111/jace.13239

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

CuAl1/2Fe1/2O2 delafossite was prepared using a solid-state reaction method to investigate its optical and electronic transport properties. CuAl1/2Fe1/2O2 formed a hexagonal delafossite structure with an R (3) over barm space group. The positive Seebeck coefficient and the direct optical gap of 3.6 eV confirmed that the CuAl1/2Fe1/2O2 delafossite in a p-type transparent conducting oxide. The fluorescence emission at 390nm (green emission) confirmed that CuAl1/2Fe1/2O2 has a direct transition band gap. Thermogravimetric analysis indicated a weight loss of 1.2%, caused by the intercalation of O atoms, which produced hole carriers from the different ionic radii at the B sites. The electric conductivity at room temperature was thermally activated, as predicted by the small-polaron hopping mechanism, with an activation energy of 75meV and a charge transport energy of 61 meV. CuAl1/2Fe1/2O2 delafossite exhibited p-type optoelectronic behavior and is a transparent conducting oxide, which may be crucial in the p-type photonic and electrode industries.

引用

页码：437 / 442

页数：6

共 28 条

[1] Poole-Frenkel effect in sputter-deposited CuAlO2+x nanocrystals [J].