Design parameters of a tunable semiconductor multiple quantum well electron wave filter

被引:3
作者
Garg, S [1 ]
Sinha, RK [1 ]
Deori, KL [1 ]
机构
[1] Univ Delhi, Fac Technol, Dept Appl Phys, Delhi Coll Engn, Delhi 110042, India
关键词
D O I
10.1088/0268-1242/18/4/316
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we discuss the use of a semiconductor multiple quantum well (MQW) electron wave filter for multi-channel communication applications. This bandpass-type electron wave energy filter, made of GaAs and Ga0.55Al0.45As, is designed for different numbers of layers and cavities for a pass wavelength of 10 nm. We report on the calculated values of the design parameters, such as the passband wavelength, 3-dB bandwidth, quality factor and passband loss for the electron wave filter. The design parameters are also evaluated for a tunable MQW electron wave filter when varying the angle at which the electron wave is incident on the input layer of the filter.
引用
收藏
页码:292 / 296
页数:5
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