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Ti3C2Tx MXene characterization produced from SHS-ground Ti3AlC2
被引:108
作者:
Pazniak, Anna
[1
]
Bazhin, Pavel
[1
,2
]
Shplis, Nikolay
[1
]
Kolesnikov, Evgeniy
[1
]
Shchetinin, Igor
[3
]
Komissarov, Alexander
[4
]
Polcak, Josef
[5
,6
]
Stolin, Alexander
[2
]
Kuznetsov, Denis
[1
]
机构:
[1] Natl Univ Sci & Technol MISiS, Dept Funct Nanomat & High Temp Mat, Moscow 119049, Russia
[2] Russian Acad Sci, Merzhanov Inst Struct Macrokinet & Mat Sci, Lab Plast Deformat Mat, Chernogolovka 142432, Russia
[3] Natl Univ Sci & Technol MISiS, Ctr Xray Struct Res & Mat Diag, Moscow 119049, Russia
[4] Natl Univ Sci & Technol MISiS, Lab Hybrid Nanostruct Mat, Moscow 119049, Russia
[5] Brno Univ Technol, CEITEC Cent European Inst Technol, Brno 61600, Czech Republic
[6] Brno Univ Technol, Inst Engn Phys, Brno 61669, Czech Republic
关键词:
MXenes;
Self-propagation high-temperature synthesis;
Chemical etching;
Electrical conductivity;
CARBIDE MXENE;
EXFOLIATION;
TI2ALC;
D O I:
10.1016/j.matdes.2019.108143
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
MXenes are an emerging family of two-dimensional (2D) early transition metal carbides/nitrides that are produced by selective A-element chemical etching from 3D MAX phase counterpart. Herein we report a low-cost method combining self-propagation high-temperature synthesis (SHS) and grinding to produce Ti3AlC2 precursor and further its usage to obtain Ti3C2Tx MXene. The SHS-ground precursor requires the same etching conditions as pressure-less synthesized precursors to fully etch A-layer and convert the 3D structure into 2D state. The obtained MXenes are atomically-thin flakes with an average lateral size of 1-2 mu m. The room temperature electrical resistivity of Ti3C2Tx based 11 mu m-thick film ranges between 295 and 317 mu Omega.cm. SHS combining with grinding in one step can be considered as a scalable method to MXene synthesis. (C) 2019 Published by Elsevier Ltd.
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