Ti3C2Tx MXene characterization produced from SHS-ground Ti3AlC2

被引:108
作者
Pazniak, Anna [1 ]
Bazhin, Pavel [1 ,2 ]
Shplis, Nikolay [1 ]
Kolesnikov, Evgeniy [1 ]
Shchetinin, Igor [3 ]
Komissarov, Alexander [4 ]
Polcak, Josef [5 ,6 ]
Stolin, Alexander [2 ]
Kuznetsov, Denis [1 ]
机构
[1] Natl Univ Sci & Technol MISiS, Dept Funct Nanomat & High Temp Mat, Moscow 119049, Russia
[2] Russian Acad Sci, Merzhanov Inst Struct Macrokinet & Mat Sci, Lab Plast Deformat Mat, Chernogolovka 142432, Russia
[3] Natl Univ Sci & Technol MISiS, Ctr Xray Struct Res & Mat Diag, Moscow 119049, Russia
[4] Natl Univ Sci & Technol MISiS, Lab Hybrid Nanostruct Mat, Moscow 119049, Russia
[5] Brno Univ Technol, CEITEC Cent European Inst Technol, Brno 61600, Czech Republic
[6] Brno Univ Technol, Inst Engn Phys, Brno 61669, Czech Republic
关键词
MXenes; Self-propagation high-temperature synthesis; Chemical etching; Electrical conductivity; CARBIDE MXENE; EXFOLIATION; TI2ALC;
D O I
10.1016/j.matdes.2019.108143
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
MXenes are an emerging family of two-dimensional (2D) early transition metal carbides/nitrides that are produced by selective A-element chemical etching from 3D MAX phase counterpart. Herein we report a low-cost method combining self-propagation high-temperature synthesis (SHS) and grinding to produce Ti3AlC2 precursor and further its usage to obtain Ti3C2Tx MXene. The SHS-ground precursor requires the same etching conditions as pressure-less synthesized precursors to fully etch A-layer and convert the 3D structure into 2D state. The obtained MXenes are atomically-thin flakes with an average lateral size of 1-2 mu m. The room temperature electrical resistivity of Ti3C2Tx based 11 mu m-thick film ranges between 295 and 317 mu Omega.cm. SHS combining with grinding in one step can be considered as a scalable method to MXene synthesis. (C) 2019 Published by Elsevier Ltd.
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页数:7
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