Ti3C2Tx MXene characterization produced from SHS-ground Ti3AlC2

被引：127

作者：

Pazniak, Anna ^{[1
]}

Bazhin, Pavel ^{[1
,2
]}

Shplis, Nikolay ^{[1
]}

Kolesnikov, Evgeniy ^{[1
]}

Shchetinin, Igor ^{[3
]}

Komissarov, Alexander ^{[4
]}

Polcak, Josef ^{[5
,6
]}

Stolin, Alexander ^{[2
]}

Kuznetsov, Denis ^{[1
]}

机构：

[1] Natl Univ Sci & Technol MISiS, Dept Funct Nanomat & High Temp Mat, Moscow 119049, Russia

[2] Russian Acad Sci, Merzhanov Inst Struct Macrokinet & Mat Sci, Lab Plast Deformat Mat, Chernogolovka 142432, Russia

[3] Natl Univ Sci & Technol MISiS, Ctr Xray Struct Res & Mat Diag, Moscow 119049, Russia

[4] Natl Univ Sci & Technol MISiS, Lab Hybrid Nanostruct Mat, Moscow 119049, Russia

[5] Brno Univ Technol, CEITEC Cent European Inst Technol, Brno 61600, Czech Republic

[6] Brno Univ Technol, Inst Engn Phys, Brno 61669, Czech Republic

来源：

MATERIALS & DESIGN | 2019年 / 183卷

关键词：

MXenes; Self-propagation high-temperature synthesis; Chemical etching; Electrical conductivity; CARBIDE MXENE; EXFOLIATION; TI2ALC;

D O I：

10.1016/j.matdes.2019.108143

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

MXenes are an emerging family of two-dimensional (2D) early transition metal carbides/nitrides that are produced by selective A-element chemical etching from 3D MAX phase counterpart. Herein we report a low-cost method combining self-propagation high-temperature synthesis (SHS) and grinding to produce Ti3AlC2 precursor and further its usage to obtain Ti3C2Tx MXene. The SHS-ground precursor requires the same etching conditions as pressure-less synthesized precursors to fully etch A-layer and convert the 3D structure into 2D state. The obtained MXenes are atomically-thin flakes with an average lateral size of 1-2 mu m. The room temperature electrical resistivity of Ti3C2Tx based 11 mu m-thick film ranges between 295 and 317 mu Omega.cm. SHS combining with grinding in one step can be considered as a scalable method to MXene synthesis. (C) 2019 Published by Elsevier Ltd.

引用

页数：7

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