Impact of photoacid generator leaching on optics photocontamination in 193-nm immersion lithography

被引:6
|
作者
Liberman, Vladimir [1 ]
Rothschild, Mordechai
Palmacci, Stephen T.
Grenville, Andrew
机构
[1] MIT, Lincoln Lab, Lexington, MA 02420 USA
[2] SEMATECH, Intel Corp, Austin, TX 78741 USA
来源
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | 2007年 / 6卷 / 01期
关键词
photoacid generator; photocontamination; immersion lithography; 193-nm; laser irradiation; water;
D O I
10.1117/1.2712841
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Leaching of resist components into water has been reported in several studies. Even low dissolution levels of photoacid generator (PAG) may lead to photocontamination of the last optical surface of the projection lens. To determine the impact of this phenomenon on optics lifetime, we initiate a set of controlled studies, where predetermined amounts of PAG are introduced into pure water and the results monitored quantitatively. The study identifies the complex, nonlinear paths leading to photocontamination of the optics. We also discover that spatial contamination patterns of the optics are strongly dependent on the flow geometry. Both bare SiO2 surfaces as well as coated CaF2 optics are studied. We find that for all surfaces, at concentrations typical of leached PAG, below 500 ppb, the in situ self-cleaning processes prevent contamination of the optics. (c) 2007 Society of Photo-Optical Instrumentation Engineers.
引用
收藏
页数:7
相关论文
共 50 条
  • [1] Studies of consequences of photo-acid generator leaching in 193-nm immersion lithography
    Liberman, V.
    Switkes, M.
    Rothschild, M.
    Palmacci, S. T.
    Grenville, A.
    OPTICAL MICROLITHOGRAPHY XIX, PTS 1-3, 2006, 6154 : U525 - U536
  • [2] Novel fluorinated polymers for application in 193-nm lithography and 193-nm immersion lithography
    Yamashita, Tsuneo
    Ishikawa, Takuji
    Yoshida, Tomohiro
    Hayami, Takashi
    Aoyama, Hirokazu
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXIII, PTS 1 AND 2, 2006, 6153 : U783 - U795
  • [3] Controlled contamination studies in 193-nm immersion lithography
    Liberman, V
    Palmacci, ST
    Hardy, DE
    Rothschild, M
    Grenville, A
    Optical Microlithography XVIII, Pts 1-3, 2005, 5754 : 148 - 153
  • [4] Pellicle choice for 193-nm immersion lithography photomasks
    Cotte, E
    Hässler, R
    Utess, B
    Antesberger, G
    Kromer, F
    Teuber, S
    24TH ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PT 1 AND 2, 2004, 5567 : 511 - 520
  • [5] 193-nm lithography
    Rothschild, M
    Forte, AR
    Horn, MW
    Kunz, RR
    Palmateer, SC
    Sedlacek, JHC
    LASERS AS TOOLS FOR MANUFACTURING OF DURABLE GOODS AND MICROELECTRONICS, 1996, 2703 : 398 - 404
  • [6] 193-NM LITHOGRAPHY
    ROTHSCHILD, M
    FORTE, AR
    HORN, MW
    KUNZ, RR
    PALMATEER, SC
    SEDLACEK, JHC
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (03) : 916 - 923
  • [7] Synthesis of fluorinated materials for 193-nm immersion lithography and 157-nm lithography
    Yamashita, T
    Ishikawa, T
    Yoshida, T
    Hayamai, I
    Araki, T
    Aoyama, H
    Hagiwara, T
    Itani, T
    Fujii, K
    Advances in Resist Technology and Processing XXII, Pt 1 and 2, 2005, 5753 : 564 - 571
  • [8] Development of novel materials for 193-nm dry and immersion lithography
    Sasaki, Takashi
    Shirota, Naoko
    Wang, Shu-Zhong
    Takebe, Yoko
    Yokokoji, Osamu
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2006, 19 (05) : 573 - 578
  • [9] Resist component leaching in 193 nm immersion lithography
    Dammel, RR
    Pawlowski, G
    Romano, A
    Houlihan, FM
    Kim, WK
    Sakamuri, R
    Abdallah, D
    Advances in Resist Technology and Processing XXII, Pt 1 and 2, 2005, 5753 : 95 - 101
  • [10] Leaching phenomena and their suppresion in 193 nm immersion lithography
    Dammel, RR
    Pawlowski, G
    Romano, A
    Houlihan, FM
    Kim, WK
    Sakamuri, R
    Abdallah, D
    Padmanaban, M
    Rahman, MD
    McKenzie, D
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2005, 18 (05) : 593 - 602