A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric

被引：1
|
作者：
Ji, Feng [1 ]
Xu, J. P. [2 ]
Liu, L. [2 ]
Tang, W. M. [3 ]
Lai, P. T. [4 ]
机构：
[1] Wuhan Polytech, Wuhan 430074, Peoples R China
[2] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
[3] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
[4] Univ Hong Kong, Dept Elect & Elect Engn, Pokfulam, Hong Kong, Peoples R China
来源：
MICROELECTRONICS RELIABILITY | 2016年 / 57卷
基金：
中国国家自然科学基金;
关键词：
GeOl/GeON MOSFETs; Threshold voltage; Ultra-thin-body; High-k gate dielectric; ULTRATHIN-BODY; FILM;
D O I：
10.1016/j.microrel.2015.12.004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 2-D analytical threshold-voltage model for ultra-thin-body MOSFET with buried insulator and high-k gate dielectric is established by solving the 2-D Poisson's equation for the gate-dielectric, channel and buried-insulator regions. The validity of the model is confirmed by comparing with experimental data and other models. Using the model, the influences of gate-dielectric permittivity, buried-insulator permittivity, channel thickness, buried insulator thickness and channel doping concentration on threshold behaviors are investigated. It is found that the threshold behaviors can be improved by using buried insulator with low permittivity, thin channel and high channel doping concentration. However, the threshold performance would be degraded when high-k gate dielectric is used due to enhanced fringing-field effect. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：24 / 33
页数：10
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