Pressure-Induced Metallization and Robust Superconductivity in Pristine 1T-SnSe2

被引：39

作者：

Zhou, Yonghui ^{[1
]}

Zhang, Bowen ^{[1
,2
]}

Chen, Xuliang ^{[1
]}

Gu, Chuanchuan ^{[1
]}

An, Chao ^{[1
,2
]}

Zhou, Ying ^{[1
,2
]}

Cai, Kaiming ^{[3
]}

Yuan, Yifang ^{[1
,4
,5
]}

Chen, Chunhua ^{[1
,2
]}

Wu, Hao ^{[1
,4
,5
]}

Zhang, Ranran ^{[1
]}

Park, Changyong ^{[6
]}

Xiong, Yimin ^{[1
,7
]}

Zhang, Xiuwen ^{[8
]}

Wang, Kaiyou ^{[3
,9
,10
]}

Yang, Zhaorong ^{[1
,7
,11
]}

机构：

[1] Chinese Acad Sci, High Magnet Field Lab, Anhui Prov Key Lab Condensed Matter Phys Extreme, Hefei 230031, Anhui, Peoples R China

[2] Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China

[4] Zhengzhou Univ, Dept Phys, Zhengzhou 450052, Henan, Peoples R China

[5] Zhengzhou Univ, Lab Mat Phys, Zhengzhou 450052, Henan, Peoples R China

[6] Carnegie Inst Sci, Geophys Lab, HPCAT, Argonne, IL 60439 USA

[7] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[8] Shenzhen Univ, Coll Elect Sci & Technol, Shenzhen 518060, Peoples R China

[9] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China

[10] Univ Chinese Acad Sci, Ctr Excellence Topol Quantum Computat, Beijing 100049, Peoples R China

[11] Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Anhui, Peoples R China

来源：

ADVANCED ELECTRONIC MATERIALS | 2018年 / 4卷 / 08期

基金：

中国国家自然科学基金;

关键词：

metal dichalcogenides; metallization; pressure; superconductivity; synchrotron X-ray diffraction; OPTICAL-PROPERTIES; SNS2; STRAIN; STATE; CDI2;

D O I：

10.1002/aelm.201800155

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Band engineering in layered metal dichalcogenides leads to a variety of physical phenomena and has obtained considerable attention recently. In this work, pressure-induced metallization and superconductivity in pristine 1T-SnSe2 is reported via electrical transport and synchrotron X-ray diffraction experiments. Electrical transport results show that the metallization emerges above 15.2 GPa followed by appearance of superconducting transition at 18.6 GPa. The superconductivity is robust with a nearly constant T-c approximate to 6.1 K between 30.1 and 50.3 GPa. High-pressure synchrotron X-ray diffraction experiments indicate that the 1T-SnSe2 phase maintains up to 46.0 GPa. Although the theoretical predicted structural transition and decomposition of SnSe2 into Sn3Se4 and Se are not detected, it is argued that the structural instability under high pressure might be crucial for the superconductivity. These findings demonstrate that 1T-SnSe2 is a very rare system from which superconductivity can be driven via multiple ways.

引用

页数：7

共 49 条

[1] Superconductivity in noncentrosymmetric YPtBi under pressure [J].