Characteristics of Metal-Semiconductor-Metal Ultraviolet Photodetectors Based on Pure ZnO/Amorphous IGZO Thin-Film Structures

被引:8
|
作者
Lam, Kin-Tak [1 ]
Young, Sheng-Joue [2 ]
Chu, Yen-Lin [3 ,4 ]
Tsai, Chi-Nan [3 ,4 ]
Chu, Tung-Te [5 ]
Lu, Ting-Sung [3 ,4 ]
Ji, Liang-Wen [3 ,4 ]
机构
[1] Fujian Univ Technol, Fuzhou 350108, Fujian, Peoples R China
[2] Natl United Univ, Dept Elect Engn, Miaoli 36063, Taiwan
[3] Natl Formosa Univ, Dept Electroopt Engn, Huwei Township 632, Yunlin, Taiwan
[4] Natl Formosa Univ, Inst Electroopt & Mat Sci, Huwei Township 632, Yunlin, Taiwan
[5] Kao Yuan Univ, Dept Mech Automat Engn, Kaohsiung 821, Taiwan
关键词
Compendex;
D O I
10.1155/2021/6649200
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study, metal-semiconductor-metal-structured ultraviolet (UV) photodetectors (PDs) based on pure zinc oxide (ZnO) and amorphous indium gallium zinc oxide (a-IGZO) thin films were fabricated and characterized. The ZnO seed layers were deposited on Corning glass substrates via a radio frequency (RF) magnetron sputtering technique. Results showed that under a 5 V applied bias; the dark currents of the pure ZnO and a-IGZO thin films were 0.112 pA and 2.85 nA, respectively. Meanwhile, the UV-to-visible rejection ratio of the pure ZnO and a-IGZO thin films were 14.33 and 256, respectively. Lastly, the PDs of thea-IGZO thin films had a lower leakage current and higher rejection ratio than that of the pure ZnO thin films from the UV to visible light region.
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页数:6
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