Characteristics of Metal-Semiconductor-Metal Ultraviolet Photodetectors Based on Pure ZnO/Amorphous IGZO Thin-Film Structures

被引：8

作者：

Lam, Kin-Tak ^{[1
]}

Young, Sheng-Joue ^{[2
]}

Chu, Yen-Lin ^{[3
,4
]}

Tsai, Chi-Nan ^{[3
,4
]}

Chu, Tung-Te ^{[5
]}

Lu, Ting-Sung ^{[3
,4
]}

Ji, Liang-Wen ^{[3
,4
]}

机构：

[1] Fujian Univ Technol, Fuzhou 350108, Fujian, Peoples R China

[2] Natl United Univ, Dept Elect Engn, Miaoli 36063, Taiwan

[3] Natl Formosa Univ, Dept Electroopt Engn, Huwei Township 632, Yunlin, Taiwan

[4] Natl Formosa Univ, Inst Electroopt & Mat Sci, Huwei Township 632, Yunlin, Taiwan

[5] Kao Yuan Univ, Dept Mech Automat Engn, Kaohsiung 821, Taiwan

来源：

JOURNAL OF NANOMATERIALS | 2021年 / 2021卷

关键词：

Compendex;

D O I：

10.1155/2021/6649200

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this study, metal-semiconductor-metal-structured ultraviolet (UV) photodetectors (PDs) based on pure zinc oxide (ZnO) and amorphous indium gallium zinc oxide (a-IGZO) thin films were fabricated and characterized. The ZnO seed layers were deposited on Corning glass substrates via a radio frequency (RF) magnetron sputtering technique. Results showed that under a 5 V applied bias; the dark currents of the pure ZnO and a-IGZO thin films were 0.112 pA and 2.85 nA, respectively. Meanwhile, the UV-to-visible rejection ratio of the pure ZnO and a-IGZO thin films were 14.33 and 256, respectively. Lastly, the PDs of thea-IGZO thin films had a lower leakage current and higher rejection ratio than that of the pure ZnO thin films from the UV to visible light region.

引用

页数：6

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