The effects of thermal annealing on the electrical characteristics of Au/n-InP/In diode

被引：10

作者：

Cakici, Tuba ^{[1
]}

Saglam, Mustafa ^{[1
]}

Guzeldir, Betul ^{[1
]}

机构：

[1] Ataturk Univ, Fac Phys, Dept Phys, TR-25240 Erzurum, Turkey

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2014年 / 28卷

关键词：

Schottky diode; InP; Thermal annealing; CURRENT-VOLTAGE CHARACTERISTICS; HOMOGENEOUS BARRIER HEIGHT; TEMPERATURE-DEPENDENCE; SCHOTTKY CONTACTS; STRUCTURAL-PROPERTIES; TRANSPORT MECHANISMS; PARAMETERS; DENSITY; STATES;

D O I：

10.1016/j.mssp.2014.07.037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An Au/n-InP/In diode has been fabricated in the laboratory conditions and the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the diode have been measured in room temperature. In order to observe the effect of the thermal annealing, this diode has been annealed at temperatures 100 and 200 degrees C for 3 min in N-2 atmosphere. The characteristic parameters such as leakage current, barrier height and ideality factor of this diode have been calculated from the forward bias I-V and reverse bias C-V characteristics as a function of annealing temperature. Also the rectifying ratio of the diode is evaluated for as-deposited and annealed diode. (C) 2014 Elsevier Ltd. All rights reserved,

引用

页码：121 / 126

页数：6

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