Asymmetric carrier transport in InGaAs quantum wells and wires grown on tilted InP substrates

被引：1
作者：
Monte, AFG [1 ]
da Silva, SW
Cruz, JMR
Morais, PC
Chaves, AS
机构：
[1] Univ Brasilia, NFA, Inst Fis, BR-70919970 Brasilia, DF, Brazil
[2] Univ Fed Minas Gerais, Dept Fis, BR-30161 Belo Horizonte, MG, Brazil
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期
关键词：
quantum well; quantum wire; fractal diffusion; asymmetric diffusion;
D O I：
10.1016/S1386-9477(02)00736-1
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The influence of the interface morphology upon the electron-hole transport in intrinsic In0.53Ga0.47As/InP quantum structures was investigated by scanning the photoluminescence PL intensity profile on the sample surface. The results suggest that the carrier diffusion is very sensitive to both the roughness of the interfaces and the presence of finite-width terraces. It was found that the carrier density profile shows asymmetric diffusion normal to the terraces whereas it shows symmetric expansion along the terraces. (C) 2002 Elsevier Science B.V. All rights reserved.
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页码：169 / 171
页数：3
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