Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects

被引：11

作者：

Pinchbeck, Joseph ^{[1
]}

Lee, Kean Boon ^{[1
]}

Jiang, Sheng ^{[1
]}

Houston, Peter ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire, England

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2021年 / 54卷 / 10期

基金：

英国工程与自然科学研究理事会;

关键词：

GaN; HEMTs; transconductance; drain induced barrier lowering;

D O I：

10.1088/1361-6463/abcb34

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaN/GaN high electron mobility transistors with a range of dual metal gate (DMG) lengths have been fabricated and studied. An improvement in transconductance up to 9% has been measured in the DMG devices in comparison to the conventional single metal gate devices. This is attributed to the distribution of the electric field under the gate region as a result of two gate metals. The drain induced barrier lowering is also suppressed using the sub-mu m DMG devices, with a drain induced barrier lowering decrease of around 50% due to a potential shielding effect in the two-dimensional electron gas channel.

引用

页数：7

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