Electric field induced shifts of electronic energy levels in spherical quantum dot

The influence of an electric field on the electrons confined in semiconductor spherical quantum dots (QDs) was investigated by using the perturbation method. We illustrate the theory for a single GaAs spherical QD. The computed results show that the applied field lowers the electronic energy levels, the lowering being most pronounced for the ground level. The energy levels are also found to be relatively more influenced by the field in a QD of larger size. We prove a spherical QD to be more sensitive to applied field than a quantum cube as is evident from the comparison of the field induced shifts in their ground levels. (C) 1997 Elsevier Science Ltd.