g-Factor of low mobility 2D GaAs electron gas as determined from high magnetic field experiments

被引：3

作者：

Germanenko, A. V. ^{[1
]}

Kozlova, N. ^{[2
]}

Minkov, G. M. ^{[3
]}

Rut, O. E. ^{[1
]}

Sherstobitov, A. A. ^{[3
]}

Freudenberger, J. ^{[2
]}

机构：

[1] Ural State Univ, Ekaterinburg 620083, Russia

[2] IFW Dresden, Leibnitz Inst Solid State & Mat Res Dresden, D-01171 Dresden, Germany

[3] RAS, Inst Met Phys, Ekaterinburg 620041, Russia

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2010年 / 42卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

Spin phenomena; Transport; SURFACE INVERSION LAYER; 2-DIMENSIONAL SYSTEMS;

D O I：

10.1016/j.physe.2009.10.044

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We study low-mobility 2D electron gas in GaAs quantum well in tilted magnetic field up to 45T. Analyzing the behavior of the Shubnikov-de Haas (SdH) oscillations we obtain the value of g-factor, vertical bar g vertical bar = 0.9 +/- 0.1, which is noticeably larger than that predicted theoretically and obtained from optical experiments. Possible reasons of the discrepancy are discussed. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：960 / 963

页数：4

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