Influence of SiO2 or h-BN substrate on the room-temperature electronic transport in chemically derived single layer graphene

被引：12

作者：

Wang, Zhenping ^{[1
]}

Yao, Qirong ^{[2
]}

Hu, Yalei ^{[1
]}

Li, Chuan ^{[2
]}

Hussmann, Marleen ^{[1
]}

Weintrub, Ben ^{[3
]}

Kirchhof, Jan N. ^{[3
]}

Bolotin, Kirill ^{[3
]}

Taniguchi, Takashi ^{[4
]}

Watanabe, Kenji ^{[4
]}

Eigler, Siegfried ^{[1
]}

机构：

[1] Free Univ Berlin, Inst Chem & Biochem, Takustr 3, D-14195 Berlin, Germany

[2] Univ Twente, MESA Inst Nanotechnol, Phys Interfaces & Nanomat, POB 217, NL-7500 AE Enschede, Netherlands

[3] Free Univ Berlin, Inst Phys, Arnimallee 14, D-14195 Berlin, Germany

[4] Natl Inst Mat Sci, Adv Mat Lab, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

来源：

RSC ADVANCES | 2019年 / 9卷 / 65期

基金：

欧洲研究理事会;

关键词：

HIGH-CONDUCTIVITY; GRAPHITE OXIDE; BORON-NITRIDE; REDUCTION; DEFECTS;

D O I：

10.1039/c9ra09197a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The substrate effect on the electronic transport of graphene with a density of defects of about 0.5% ((0.5%)G) is studied. Devices composed of monolayer (0.5%)G, partially deposited on SiO2 and h-BN were used for transport measurements. We find that the (0.5%)G on h-BN exhibits ambipolar transfer behaviours under ambient conditions, in comparison to unipolar p-type characters on SiO2 for the same flake. While intrinsic defects in graphene cause scattering, the use of h-BN as a substrate reduces p-doping.

引用

页码：38011 / 38016

页数：6

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