Substrate influence on preferential orientation of Bi2Te3 layers grown by physical vapor transport using elemental Bi and Te sources

被引：12
作者：
Concepcion Diaz, Omar [1 ]
de Melo Pereira, Osvaldo [2 ]
Escobosa Echavarria, Arturo [3 ]
机构：
[1] IPN, CINVESTAV, Programa Doctorado Nanociencias & Nanotecnol, Av Inst Politecn Nacl 2508, Mexico City 07360, DF, Mexico
[2] Univ La Habana, Fac Fis, Havana, Cuba
[3] IPN, CINVESTAV, Dept Ingn Elect, Secc Elect Estado Solido, Mexico City, DF, Mexico
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2017年 / 198卷
关键词：
Topological insulator; Physical vapor transport; Bismuth; TOPOLOGICAL INSULATOR; BISMUTH TELLURIDE; THERMOELECTRIC PROPERTIES; ELECTRICAL-PROPERTIES; THIN-FILMS; CRYSTALS; RAMAN;
D O I：
10.1016/j.matchemphys.2017.06.008
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Physical vapor transport growth of Bi2Te3 thin films from elemental Bi and Te sources in high vacuum is presented. Three different kinds of substrates were used: Si (1 0 0), Si (1 1 1) and sapphire (0 0 1). Structural and morphological properties of the films were investigated by scanning electron microscopy, energy dispersive and Raman spectroscopies, high-resolution x-ray diffraction and atomic force microscopy. In optimal conditions, all the films showed preferential orientation with the c-plane perpendicular to the growth direction, however the a-plane orientation was found to be clearly dependent on the substrate used: samples grown on sapphire grew coherently with the substrate following a spiral growth mechanism in a pyramidal structure. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：341 / 345
页数：5
相关论文
共 37 条
[1]   Structural, electrical, and thermoelectric properties of bismuth telluride: Silicon/carbon nanocomposites thin films [J].
Agarwal, Khushboo ;
Mehta, B. R. .
JOURNAL OF APPLIED PHYSICS, 2014, 116 (08)
[2]   MOCVD synthesis of compositionally tuned topological insulator nanowires [J].
Alegria, Loren D. ;
Yao, Nan ;
Petta, Jason R. .
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2014, 8 (12) :991-996
[3]   Structural and vibrational properties of PVT grown Bi2Te3 microcrystals [J].
Atuchin, V. V. ;
Gavrilova, T. A. ;
Kokh, K. A. ;
Kuratieva, N. V. ;
Pervukhina, N. V. ;
Surovtsev, N. V. .
SOLID STATE COMMUNICATIONS, 2012, 152 (13) :1119-1122
[4]   THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].
BURTON, WK ;
CABRERA, N ;
FRANK, FC .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358
[5]   Growth, Structure, and Electronic Properties of Epitaxial Bismuth Telluride Topological Insulator Films on BaF2 (111) Substrates [J].
Caha, O. ;
Dubroka, A. ;
Humlicek, J. ;
Holy, V. ;
Steiner, H. ;
Ul-Hassan, M. ;
Sanchez-Barriga, J. ;
Rader, O. ;
Stanislavchuk, T. N. ;
Sirenko, A. A. ;
Bauer, G. ;
Springholz, G. .
CRYSTAL GROWTH & DESIGN, 2013, 13 (08) :3365-3373
[6]   Synthesis of SnS2 single crystals and its Li-storage performance with LiMn2O4 cathode [J].
Chaturvedi, Apoorva ;
Aravindan, Vanchiappan ;
Hu, Peng ;
Prabhakar, Rajiv Ramanujam ;
Wong, Lydia Helena ;
Kloc, Christian ;
Madhavi, Srinivasan .
APPLIED MATERIALS TODAY, 2016, 5 :68-72
[7]   Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3 [J].
Chen, Y. L. ;
Analytis, J. G. ;
Chu, J. -H. ;
Liu, Z. K. ;
Mo, S. -K. ;
Qi, X. L. ;
Zhang, H. J. ;
Lu, D. H. ;
Dai, X. ;
Fang, Z. ;
Zhang, S. C. ;
Fisher, I. R. ;
Hussain, Z. ;
Shen, Z. -X. .
SCIENCE, 2009, 325 (5937) :178-181
[8]   Molecular beam epitaxial growth and characterization of Bi2Se3/II-VI semiconductor heterostructures [J].
Chen, Zhiyi ;
Garcia, Thor Axtmann ;
Hernandez-Mainet, Luis C. ;
Zhao, Lukas ;
Deng, Haiming ;
Krusin-Elbaum, Lia ;
Tamargo, Maria C. .
APPLIED PHYSICS LETTERS, 2014, 105 (24)
[9]   AFM and Raman studies of topological insulator materials subject to argon plasma etching [J].
Childres, Isaac ;
Tian, Jifa ;
Miotkowski, Ireneusz ;
Chen, Yong .
PHILOSOPHICAL MAGAZINE, 2013, 93 (06) :681-689
[10]  
Das JK., 2015, Int J Of Thin Film Science And Technology, V4, P13
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