Surface acoustic wave devices based on AlN/sapphire structure for high temperature applications

被引：90

作者：

Aubert, Thierry ^{[1
]}

Elmazria, Omar ^{[1
]}

Assouar, Badreddine ^{[1
]}

Bouvot, Laurent ^{[1
]}

Oudich, Mourad ^{[1
]}

机构：

[1] Nancy Univ, CNRS, UMR 7198, Inst Jean Lamour, F-54506 Vandoeuvre Les Nancy, France

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 20期

关键词：

aluminium compounds; annealing; atomic force microscopy; III-V semiconductors; scanning electron microscopy; semiconductor thin films; surface acoustic wave delay lines; wide band gap semiconductors; X-ray diffraction; SENSORS; FILMS;

D O I：

10.1063/1.3430042

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlN/sapphire layered structure has been investigated as a potential substrate for surface acoustic wave (SAW) devices operating at high temperatures up to 950 degrees C under air atmosphere. Frequency characterizations of the SAW delay lines based on this structure indicate a slight increase of 2 dB in the insertion losses after annealing for 30 min at 900 degrees C. Scanning electron and atomic force microscopy as well as x-ray diffraction measurements suggest that theses losses are due to the deterioration of the Pt/Ta electrodes and to a slight oxidation of the AlN film. (C) 2010 American Institute of Physics. [doi:10.1063/1.3430042]

引用

页数：3

共 22 条

[1]

ALEPEE C, 2000, THESIS EPFL LAUSANNE, P53510

[2] Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition [J].