6.2kV 4H-SiC pin diode with low forward voltage drop

被引：39

作者：

Sugawara, Y

Asano, K

Singh, R

Palmour, JW

机构：

[1] Kansai Elect Power Co, Amagasaki, Hyogo 6610974, Japan

[2] Cree Res Inc, Durham, NC 27703 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

high blocking voltage; mesa JTE; reverse recovery time; SiC pin diode; V-F;

D O I：

10.4028/www.scientific.net/MSF.338-342.1371

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A pin diode with improved termination named mesa JTE has been developed and a new record high blocking voltage of 6.2kV and a low V-F of 4.7V at 100AV/cm(2) have been achieved. The diode developed has a short trr of 28.5ns and an excellent trade-off between the blocking voltage and V-F superior to the trade-off of the commercialized Si pin diodes.

引用

页码：1371 / 1374

页数：4

共 5 条

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ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 1998, :119-122

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