Spatial Control of Charge Doping in n-Type Topological Insulators

被引：10

作者：

Sakamoto, Kazuyuki ^{[1
,7
,8
,14
,15
]}

Ishikawa, Hirotaka ^{[1
]}

Wake, Takashi ^{[1
]}

Ishimoto, Chie ^{[1
]}

Fujii, Jun ^{[2
]}

Bentmann, Hendrik ^{[3
,4
]}

Ohtaka, Minoru ^{[1
]}

Kuroda, Kenta ^{[5
]}

Inoue, Natsu ^{[1
]}

Hattori, Takuma ^{[5
]}

Miyamachi, Toshio ^{[5
]}

Komori, Fumio ^{[5
]}

Yamamoto, Isamu ^{[6
]}

Fan, Cheng ^{[1
]}

Kruger, Peter ^{[1
,7
,8
]}

Ota, Hiroshi ^{[9
]}

Matsui, Fumihiko ^{[9
]}

Reinert, Friedrich ^{[3
,4
]}

Avila, Jose ^{[10
]}

Asensio, Maria C. ^{[11
,12
,13
]}

机构：

[1] Chiba Univ, Dept Nanomat Sci, Chiba 2638522, Japan

[2] Ist Officina Mat IOM CNR, Lab TASC, I-34149 Trieste, Italy

[3] Univ Wurzburg, Expt Phys 7, D-97074 Wurzburg, Germany

[4] Univ Wurzburg, Rontgen Res Ctr Complex Mat, D-97074 Wurzburg, Germany

[5] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan

[6] Saga Univ, Synchrotron Light Applicat Ctr, Saga 8408502, Japan

[7] Chiba Univ, Dept Mat Sci, Chiba 2638522, Japan

[8] Chiba Univ, Mol Chiral Res Ctr, Chiba 2638522, Japan

[9] Inst Mol Sci, UVSOR Synchrotron Facil, Okazaki, Aichi 4448585, Japan

[10] Synchrotron SOLEIL, F-91192 Gif Sur Yvette, France

[11] Spanish Sci Res Council CSIC, Mat Sci Inst Madrid ICMM, E-28049 Madrid, Spain

[12] Valencia Univ ICMUV, Inst Mat Sci, CSIC Associated Unit MATINEE, E-28049 Madrid, Spain

[13] ICMM, E-28049 Madrid, Spain

[14] Osaka Univ, Dept Appl Phys, Suita, Osaka 5650871, Japan

[15] Osaka Univ, Ctr Spintron Res Network, Grad Sch Engn Sci, Osaka 5608531, Japan

来源：

NANO LETTERS | 2021年 / 21卷 / 10期

关键词：

topological insulator; photoinduced doping; photochemical reaction; photoelectron spectroscopy; spintronics; SURFACE; BI2SE3; JUNCTION; ELECTRONEGATIVITY; ENERGY; STATE; HALL;

D O I：

10.1021/acs.nanolett.1c01100

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Spatially controlling the Fermi level of topological insulators and keeping their electronic states stable are indispensable processes to put this material into practical use for semiconductor spintronics devices. So far, however, such a method has not been established yet. Here we show a novel method for doping a hole into n-type topological insulators Bi2X3 (X= Se, Te) that overcomes the shortcomings of the previous reported methods. The key of this doping is to adsorb H2O on Bi2X3 decorated with a small amount of carbon, and its trigger is the irradiation of a photon with sufficient energy to excite the core electrons of the outermost layer atoms. This method allows controlling the doping amount by the irradiation time and acts as photolithography. Such a tunable doping makes it possible to design the electronic states at the nanometer scale and, thus, paves a promising avenue toward the realization of novel spintronics devices based on topological insulators.

引用

页码：4415 / 4422

页数：8

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