Excess noise in polysilicon thin film transistors operated in kink regime

被引：3
作者：
Giovannini, S
Mariucci, L
Pecora, A
Foglietti, V
Fortunato, G
Reita, C
机构：
[1] CNR, IESS, I-00156 Rome, Italy
[2] Thomson CSF, LCR, F-91404 Orsay, France
来源：
ELECTRONICS LETTERS | 1997年 / 33卷 / 24期
关键词：
thin film transistors; polysilicon; impact ionisation;
D O I：
10.1049/el:19971392
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low frequency noise in polysilicon thin film transistors (TFTs) has been investigated for different operating conditions. When the devices are biased in the linear regime, the 1/f noise can be ascribed to carrier number fluctuations, When the devices are biased above pinch-off, an anomalous current increase appears, related to impact ionisation (the kink effect), with an associated excess noise. This excess noise can be attributed, in analogy with SOI-MOSFETs, to additional fluctuations relating to the parasitic bipolar transistor carrier transport, responsible for the enhancement of the anomalous current increase in polysilicon TFTs.
引用
收藏
页码：2075 / 2077
页数：3
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