Effects of buffer and BSF contact layer on ZnMnO/CIGSSe heterojunction solar cell

This paper proposes necessary steps for improving the performance of a stable and highly efficient Mn-doped ZnO/CIGSSe based buffer and absorber layer solar cells. Modification in the conventional (Zn:B/Zo(O,S,OH)/ZnMgO/CIGSSe/Mo(S,Se)/Mo) structure is done by substituting the ZoMnO buffer layer and ZnSe2 Back Surface Field (BSF) contact layer. The tuning of donor and acceptor concentration has been explored. Furthermore, the tuning of the thickness of donor concentration has also been tried. Computer simulation has been carried on to evaluate the parameters like short-circuit current density, efficiency, open-circuit voltage, and external quantum efficiency (EQE) at N-d=1x10(20) cm(-3) of ZnMnO with 50nm thickness and N-a=7x10(16) cm(-3) CIGSSe with 2 mu m thickness. The numerical simulation has been carried out on AFORS-HET ver. 2.5 simulator with 500nm monochromatic light, with 2.8x10(17) cm(2)s(-1) flux photon and 10nm spectral width.