Empirical modeling of the refractive index for (AlGaIn)As lattice matched to InP

被引：12

作者：

Grasse, C. ^{[1
]}

Boehm, G. ^{[1
]}

Mueller, M. ^{[1
]}

Gruendl, T. ^{[1
]}

Meyer, R. ^{[1
]}

Amann, M-C ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2010年 / 25卷 / 04期

关键词：

LAYERS; PARAMETERS;

D O I：

10.1088/0268-1242/25/4/045018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A composition-dependent empirical interpolation formula for the refractive index of AlGaInAs epilayers lattice matched to InP substrate has been determined by using a reflection spectroscopy technique. The 2 mu m thick (AlGaIn) As layers have been grown by MBE as well as MOVPE and were characterized by x-ray diffractometry and photoluminescence measurements. The measured data from these etalon structures were fitted by using a Sellmeier equation (single oscillator model) to retrieve the refraction index for wavelengths between 2.5 and 1 mu m. The resulting accurate expression will be very useful for designing optoelectronic devices like VCSELs.

引用

页数：4

共 15 条

[1] REFRACTIVE-INDEX OF GA1-XALXAS [J].

AFROMOWITZ, MA .

SOLID STATE COMMUNICATIONS, 1974, 15 (01) :59-63

[2] Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3 μm [J].

Boehm, Gerhard ;

Grau, Markus ;

Dier, Oliver ;

Windhorn, Kirsten ;

Roenneberg, Enno ;

Rosskopf, Juergen ;

Shau, Robert ;

Meyer, Ralf ;

Ortsiefer, Markus ;

Amann, Markus-Christian .

JOURNAL OF CRYSTAL GROWTH, 2007, 301 :941-944

[3] REFRACTIVE-INDEX OF IN1-XGAXASYP1-Y LAYERS AND INP IN THE TRANSPARENT WAVELENGTH REGION [J].

BROBERG, B ;

LINDGREN, S .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (09) :3376-3381

[4] Interpolating semiconductor alloy parameters: Application to quaternary III-V band gaps [J].

Donati, GP ;

Kaspi, R ;

Malloy, KJ .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (09) :5814-5819

[5] Optical design of InAlGaAs low-loss tunnel-junction apertures for long-wavelength vertical-cavity lasers [J].

Feezell, D. ;

Buell, D. A. ;

Lofgreen, D. ;

Mehta, A. ;

Coldren, L. A. .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2006, 42 (5-6) :494-499

[6] Compositional dependence of the elastic constants and the lattice parameter of AlxGa1-xAs [J].

Gehrsitz, S ;

Sigg, H ;

Herres, N ;

Bachem, K ;

Köhler, K ;

Reinhart, FK .

PHYSICAL REVIEW B, 1999, 60 (16) :11601-11610

[7] The refractive index of AlxGa1-xAs below the band gap:: Accurate determination and empirical modeling [J].

Gehrsitz, S ;

Reinhart, FK ;

Gourgon, C ;

Herres, N ;

Vonlanthen, A ;

Sigg, H .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) :7825-7837

[8] DETERMINATION OF THE REFRACTIVE-INDEX OF INGAASP EPITAXIAL LAYERS BY MODE LINE LUMINESCENCE SPECTROSCOPY [J].

HENRY, CH ;

JOHNSON, LF ;

LOGAN, RA ;

CLARKE, DP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (12) :1887-1892

[9] REFRACTIVE-INDEXES OF (AL, GA, IN)AS EPILAYERS ON INP FOR OPTOELECTRONIC APPLICATIONS [J].

MONDRY, MJ ;

BABIC, DI ;

BOWERS, JE ;

COLDREN, LA .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (06) :627-630

[10] Short-Cavity Long-Wavelength VCSELs With Modulation Bandwidths in Excess of 15 GHz [J].

Mueller, M. ;

Hofmann, W. ;

Boehm, G. ;

Amann, M.-C. .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2009, 21 (21) :1615-1617

← 1 2 →