GaN MIS-HEMTs With Surface Reinforcement for Suppressed Hot-Electron-Induced Degradation

被引：18

作者：

Yang, Song ^{[1
]}

Zheng, Zheyang ^{[1
]}

Zhang, Li ^{[1
]}

Song, Wenjie ^{[1
]}

Chen, Kevin J. ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 04期

关键词：

Logic gates; Gallium nitride; Degradation; Stress; MODFETs; HEMTs; Performance evaluation; AlGaN; GaN MIS-HEMTs; hot electron; surface reinforcement; dynamic RON; electroluminescence;

D O I：

10.1109/LED.2021.3057933

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a processing technique to form a surface reinforcement layer (SRL) in GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) with the aim to suppress device dynamic on-resistance (R-ON) degradation caused by long-term hot-electron stress. The SRL is a crystalline (Al)GaON layer formed by reconstruction of the heterojunction surface through plasma oxidation and high temperature annealing. MIS-HEMTs with SRL exhibit substantially suppressed dynamic R-ON degradation than the conventional devices without SRL, after long-term hot-electron stress. The (Al)GaON SRL exhibits substantially enhanced thermal stability and strong immunity to energetic carriers. The SRL-enabled suppression of hot-electron-induced degradation is further verified by the electroluminescence characterizations.

引用

页码：489 / 492

页数：4

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