A distributed regional modeling approach for power bipolar devices in circuit simulation

被引：1

作者：

Berraies, MO ^{[1
]}

Leturcq, P ^{[1
]}

机构：

[1] CNRS, Lab Anal & Architecture Syst, F-31077 Toulouse 04, France

来源：

PROCEEDINGS OF THE 1997 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 1997年

关键词：

D O I：

10.1109/BIPOL.1997.647418

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An alternative strategy to circuit oriented power device modeling is presented It consists on a regional view to modeling and a new partition of the model library. The latter is made up of a limited number of submodels associated with well-identified regions of semiconductor structures. By linking these building blocks, one obtain an homogeneous set of power semiconductor device models.

引用

页码：131 / 134

页数：4