A new vertical GaN Schottky barrier diode with floating metal ring for high breakdown voltage

被引：9

作者：

Lee, SC ^{[1
]}

Her, JC ^{[1
]}

Kim, SS ^{[1
]}

Ha, MW ^{[1
]}

Seo, KS ^{[1
]}

Choi, YL ^{[1
]}

Han, MK ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea

来源：

ISPSD '04: PROCEEDINGS OF THE 16TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2004年

关键词：

D O I：

10.1109/WCT.2004.240037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A vertical GaN Schottky Barrier Diode (SBD) employing floating metal ring as an edge termination of which breakdown voltage is larger than device without any termination has been fabricated on bulk GaN substrate. Fabricated GaN SBD exhibits high breakdown voltage of 353V and very fast reverse recovery characteristics of 28ns while breakdown voltage of device without termination is 159V. It should be noted that the proposed device does not require any additional process.

引用

页码：319 / 322

页数：4

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