Preparation of gallium-doped ZnO films by oxidized ZnS films

被引：26
作者：
Jayatissa, AH [1 ]
机构：
[1] Western Michigan Univ, Coll Engn & Appl Sci, Mat Sci & Engn Program, Kalamazoo, MI 49008 USA
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2003年 / 18卷 / 06期
关键词：
D O I：
10.1088/0268-1242/18/6/101
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin films of Ga-doped ZnO were prepared by oxidation of vacuum evaporated ZnS and GaO mixtures. The electrical and structural properties of ZnO films were investigated for different oxidation temperatures and GaO contents in evaporated ZnS powder. It was found that electrical conductivity of Ga-doped ZnO was increased by one order of magnitude compared with undoped films. The carrier mobility and concentration were also increased for Ga-doped ZnO films.
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页码：L27 / L30
页数：4
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