Room-temperature multiferroic characteristics and unique vortex domain structures of h-Yb1-xInxFeO3 solid solutions

被引:4
作者
Liu, Mei Ying [1 ]
Sun, Tu Lai [1 ,2 ]
Zhu, Xiao Li [1 ]
Liu, Xiao Qiang [1 ]
Tian, He [1 ]
Chen, Xiang Ming [1 ]
机构
[1] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China
[2] Zhejiang Univ Technol, Ctr Electron Microscopy, State Key Lab Breeding Base Green Chem Synth Tech, Hangzhou, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
domain structures; ferroelectricity; hexagonal ferrites; magnetoelectric coupling; room-temperature multiferroics; HEXAGONAL FERROELECTRICITY; RMNO3;
D O I
10.1111/jace.17987
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Hexagonal rare-earth ferrites (h-RFeO3) have attracted much scientific attention due to their room-temperature multiferroicity. However, it is still a hard job to obtain h-RFeO3 bulk materials because of the meta-stability of such hexagonal phase, and the evaluation of room-temperature ferroelectric and magnetoelectric characteristics in such materials is also a challengeable issue. In the present work, Yb1-xInxFeO3 ceramics with the stable hexagonal structure were obtained by introducing chemical pressure, where the unique ferroelectric domain structures of sixfold vortex combined with tenfold vortex with a typical size of similar to 400 nm were determined. Symmetry of the present system evolved from centrosymmetric orthorhombic Pbnm (x = 0-0.4) to non-centrosymmetric hexagonal P6(3)cm (x = 0.5 and 0.6) with a ferroelectric polarization up to 3.2 mu C/cm(2), and finally to centrosymmetric hexagonal P6(3)/mmc (x = 0.7 and 0.8). The Curie point decreased monotonically from 723 K to a temperature below room temperature with increasing x, and the antiferromagnetic phase transition above room temperature was determined for all compositions. Meanwhile, a large linear magnetoelectric coefficient (alpha(ME)) up to 0.96 mV/cm Oe was obtained at room temperature, and this indicated the great application potential for magnetoelectric devices.
引用
收藏
页码:6393 / 6403
页数:11
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