Research on High Temperature Cs Activated GaAs Photocathode

被引：5

作者：

Yang Zhi ^{[1
]}

Zou Ji-jun ^{[1
]}

Niu Jun ^{[1
]}

Zhang Yi-jun ^{[1
]}

Chang Ben-kang ^{[1
]}

机构：

[1] Nanjing Univ Sci & Technol, Inst Elect Engn & Optoelect Technol, Nanjing 210094, Peoples R China

来源：

SPECTROSCOPY AND SPECTRAL ANALYSIS | 2010年 / 30卷 / 08期

关键词：

GaAs photocathode; Dipole; Surface barrier; Quantum efficiency; BAND;

D O I：

10.3964/j.issn.1000-0593(2010)08-2038-05

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

Mechanism about the change of GaAs phtotocathode's surface barrier during Cs activated process was studied. Ionized Cs and p type doping impurity(Be) form a dipole that decreases the vacuum level of GaAs. Generally, Cs activated GaAs photocathode could achieve zero electron affinity state. The quantum yield formula of reflection-mode photocathode has been solved from the 1-diemnsion continuity equations and the escape probability formula has been solved from the Schrodinger equation. It was found from the formula that the quantum efficiency of Cs activated GaAs photocathode is directly proportional to the electric field intensity of Be--Cs+ dipole. A Cs activation experiment was carried out, the experiment process tallies with the theory mentioned above and the integral sensitivity of Cs activated GaAs photocathode is 453 mu A.lm(-1), which could be inferred as a zero electron affinity state.

引用

页码：2038 / 2042

页数：5

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