Singlet-triplet transition in a few-electron lateral In0.75Ga0.25As/In0.75Al0.25As quantum dot

被引：8
作者：
Deon, F. [1 ,2 ]
Pellegrini, V. [1 ,2 ]
Carillo, F. [1 ,2 ]
Giazotto, F. [1 ,2 ]
Biasiol, G. [3 ]
Sorba, L. [1 ,2 ]
Beltram, F. [1 ,2 ]
机构：
[1] CNR, Ist Nanosci, NEST, I-56127 Pisa, Italy
[2] Scuola Normale Super Pisa, I-56127 Pisa, Italy
[3] IOM, CNR, Lab TASC, I-34149 Trieste, Italy
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 14期
关键词：
aluminium compounds; Coulomb blockade; gallium arsenide; g-factor; gyromagnetic effect; III-V semiconductors; indium compounds; quantum computing; semiconductor quantum dots; triplet state; GATE CONTROL; SPIN; WELLS; HETEROSTRUCTURE;
D O I：
10.1063/1.3380821
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The magnetic-field evolution of Coulomb blockade peaks in lateral In0.75Ga0.25As/In0.75Al0.25As quantum dots in the few-electron regime is reported. Quantum dots are defined by gates evaporated onto a 60-nm-thick hydrogen silsesquioxane insulating film. A gyromagnetic factor g(*)approximate to 4.4 is measured via zero-bias spin spectroscopy and a transition from singlet to triplet spin configuration is found at an in-plane magnetic field B=0.7 T. This observation opens the way to the manipulation of singlet and triplet states at moderate fields and its relevance for quantum information applications will be discussed.
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页数：3
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