Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P

被引：21

作者：

Hofmann, T

Schubert, M

Herzinger, CM

Pietzonka, I

机构：

[1] Univ Leipzig, Fac Phys & Geosci, D-04103 Leipzig, Germany

[2] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

[3] JA Woollam Co, Lincoln, NE 68508 USA

[4] Osram Opto Semicond, D-93049 Regensburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 20期

关键词：

D O I：

10.1063/1.1578162

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For highly disordered n-type Al0.19Ga0.33In0.48P grown lattice matched to an undoped GaAs substrate, using far-infrared-magneto-optic generalized ellipsometry, the room-temperature free-charge-carrier parameters effective mass m*=0.12(0.01) m(0), concentration N=6.7(0.2)x10(17) cm(-3), and mobility mu=339(15) cm(2)/(V s) are determined by modeling the observed magneto-optic birefringence originating from the far-infrared free-charge-carrier excitations in the Al0.19Ga0.33In0.48P layer without additional electrical measurements. (C) 2003 American Institute of Physics.

引用

页码：3463 / 3465

页数：3

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