MEDIUM-VOLTAGE DRIVES

被引：31

作者：

Hiller, Marc ^{[1
]}

Sommer, Rainer ^{[1
]}

Beuermann, Max ^{[1
]}

机构：

[1] Siemens AG, Nurnberg, Germany

来源：

IEEE INDUSTRY APPLICATIONS MAGAZINE | 2010年 / 16卷 / 02期

关键词：

Converters; Insulated gate bipolar transistors; Topology; Synchronous motors; Thyristors; Medium voltage; Inverters; Power semiconductor devices;

D O I：

10.1109/MIAS.2009.935494

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Today there are numerous different converter topologies and power semiconductor devices used in mediumvoltage drive systems. This paper provides a general overview of the common converter topologies available on the market and their corresponding major characteristics. The different topologies are compared and evaluated with respect to their semiconductor effort. Due to the available power semiconductor devices with maximum blocking voltages of 6.5kV, the drive market with power ratings up to 25MW is dominated by voltage source inverters in IGBT as well as in IGCT technology. For higher power demands and special applications, thyristor converters are still frequently used. © 2006 IEEE.

引用

页码：22 / 30

页数：9