Analysis of Hot Carrier and NBTI Induced Device Degradation on CMOS Ring Oscillator

被引：0

作者：

Zhang, Hui ^{[1
]}

Liu, Chunzhi ^{[1
]}

Wang, Tao ^{[1
]}

Zhang, Hua ^{[1
]}

Zeng, Chenhui ^{[1
]}

机构：

[1] CAPE, China Aeropolytechnol Estab, Qual Engn Ctr, Beijing, Peoples R China

来源：

2013 3RD INTERNATIONAL CONFERENCE ON CONSUMER ELECTRONICS, COMMUNICATIONS AND NETWORKS (CECNET) | 2013年

关键词：

CMOS ring oscillator; hot carrier; NBTI; degradation; DIGITAL CIRCUITS; RELIABILITY; PERFORMANCE; IMPACT;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The degradation of CMOS ring oscillator caused by hot carrier and negative bias temperature instability (NBTI) is presented in this paper. These two degradation mechanisms deteriorate the oscillator's start-up reliability and the oscillation frequency by threshold voltage (Vth) degradation. According to impact analysis, an improved ring oscillator is proposed which is insensitive to degradation. The SPICE simulation shows that the oscillator has better start-up reliability and frequency stability.

引用

页码：141 / 144

页数：4

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