I-V characteristics of the p-n junction between vertically aligned ZnO nanorods and polyaniline thin film

被引:56
作者
Li, Yinhua [1 ,2 ]
Gong, Jian [1 ]
McCune, Mallarie [1 ]
He, Gaohong [2 ]
Deng, Yulin [1 ,2 ]
机构
[1] Georgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA
[2] Dalian Univ Technol, State Key Lab Fine Chem Chem Engn & Technol, Dalian 116012, Peoples R China
基金
美国国家科学基金会;
关键词
p-n junction; ZnO nanorods; Polyaniline; ZINC-OXIDE; POLYMERIZATION; NANOTUBE; ANILINE; GROWTH; ARRAYS;
D O I
10.1016/j.synthmet.2009.11.037
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The characteristics of the p-n junction between vertically aligned ZnO nanorods and polyaniline (PANI) thin film were investigated. The rectifying behavior of the I-V curve of ZnO/PANI diode was verified with assembled ZnO/PANI structures. The cut-in voltage of the p-n junction was found to be around 0.5 V and the reverse breakdown voltage was about -27V. In addition, the effects of UV illumination and NH3 exposure on the I-V characteristics of ZnO/PANI configuration were also investigated. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:499 / 503
页数:5
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