Atomistic structure of band-tail states in amorphous silicon

被引：121

作者：

Dong, JJ ^{[1
]}

Drabold, DA ^{[1
]}

机构：

[1] Ohio Univ, Dept Phys & Astron, Condensed Matter & Surface Sci Program, Athens, OH 45701 USA

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.80.1928

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We compute accurate approximations of the electronic states near the gap in a very large and realistic model of a-Si. The spatial structure of the states is computed explicitly and discussed. The character of the local to the extended (Anderson) transition in amorphous Si is described. The density of states, the conductivity, and doping are discussed.

引用

页码：1928 / 1931

页数：4

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