Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition

被引：8

作者：

Crupi, I. ^{[1
,2
]}

Mirabella, S. ^{[1
,2
]}

D'Angelo, D. ^{[1
,2
]}

Gibilisco, S. ^{[1
,2
]}

Grasso, A. ^{[3
]}

Di Marco, S. ^{[3
]}

Simone, F. ^{[1
,2
]}

Terrasi, A. ^{[1
,2
]}

机构：

[1] Univ Catania, INFM, CNR, MATIS, I-95123 Catania, Italy

[2] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy

[3] STMicroelectronics, IMS R&D, I-95121 Catania, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 04期

关键词：

amorphous semiconductors; annealing; bonds (chemical); dark conductivity; elemental semiconductors; Hall effect; hydrogen; optical constants; photovoltaic effects; plasma CVD coatings; Raman spectra; semiconductor thin films; silicon; OPTICAL-ABSORPTION; GLOW-DISCHARGE; THIN-FILMS; A-SI; SILICON; COEFFICIENT; CONDUCTION; DISORDER; MOBILITY;

D O I：

10.1063/1.3305805

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The double sign anomaly of the Hall coefficient has been studied in p-doped and n-doped hydrogenated amorphous silicon grown by plasma enhanced chemical vapor deposition and annealed up to 500 degrees C. Dark conductivity as a function of temperature has been measured, pointing out a conduction mechanism mostly through the extended states. Anomalous Hall effect has been observed only in the as-deposited n-doped film, disappearing after annealing at 500 degrees C, while p-doped samples exhibit normal Hall effect. When Hall anomaly is present, a larger optical band gap and a greater Raman peak associated with Si-H bond are measured in comparison with the cases of normal Hall effect. The Hall anomaly will be related to the hydrogen content and implication on photovoltaic applications will be discussed.

引用

页数：6

共 33 条

[1]

[Anonymous], CLEAN ELECT PHOTOVOL

[2] Diffusion and evolution of hydrogen in hydrogenated amorphous and microcrystalline silicon [J].

Beyer, W .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 78 (1-4) :235-267

[3] TRANSPORT IN LITHIUM-DOPED AMORPHOUS SILICON [J].

BEYER, W ;

FISCHER, R ;

OVERHOF, H .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (03) :205-217

[4]

BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[5] AMORPHOUS SILICON SOLAR-CELL [J].

CARLSON, DE ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1976, 28 (11) :671-673

[6] OPTICAL CHARACTERIZATION OF AMORPHOUS-SILICON HYDRIDE FILMS [J].

CODY, GD ;

WRONSKI, CR ;

ABELES, B ;

STEPHENS, RB ;

BROOKS, B .

SOLAR CELLS, 1980, 2 (03) :227-243

[7] DISORDER AND THE OPTICAL-ABSORPTION EDGE OF HYDROGENATED AMORPHOUS-SILICON [J].

CODY, GD ;

TIEDJE, T ;

ABELES, B ;

BROOKS, B ;

GOLDSTEIN, Y .

PHYSICAL REVIEW LETTERS, 1981, 47 (20) :1480-1483

[8] HALL-MOBILITY FOR ELECTRONS IN UNDOPED A-SI-H [J].

DRESNER, J .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :742-744

[9] OBSERVATION OF NORMAL HALL-COEFFICIENT OF AMORPHOUS SI THIN-FILMS PREPARED BY LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION [J].

DU, N ;

ZHU, YT ;

TONG, BY ;

WONG, SK .

PHYSICAL REVIEW B, 1990, 41 (02) :1251-1253

[10] SIGN OF HALL-EFFECT IN HOPPING CONDUCTION [J].

EMIN, D .

PHILOSOPHICAL MAGAZINE, 1977, 35 (05) :1189-1198

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