Electron beam controlled covalent attachment of small organic molecules to graphene

被引:31
作者
Markevich, Alexander [1 ]
Kurasch, Simon [2 ]
Lehtinen, Ossi [2 ]
Reimer, Oliver [3 ]
Feng, Xinliang [4 ]
Muellen, Klaus [4 ]
Turchanin, Andrey [1 ,5 ]
Khlobystov, Andrei N.
Kaiser, Ute [2 ]
Besley, Elena [1 ]
机构
[1] Univ Nottingham, Sch Chem, Nottingham NG7 2RD, England
[2] Univ Ulm, Electron Microscopy Dept Mat Sci, D-89081 Ulm, Germany
[3] Univ Bielefeld, Fac Phys, D-33615 Bielefeld, Germany
[4] Max Planck Inst Polymer Res, Ackermannweg 10, D-55128 Mainz, Germany
[5] Univ Jena, Inst Phys Chem, Lessingstr 10, D-07743 Jena, Germany
基金
英国工程与自然科学研究理事会;
关键词
LARGE-AREA; FILMS; HYDROCARBONS; PERFORMANCE; ADSORPTION; RESOLUTION; DEFECTS;
D O I
10.1039/c5nr07539d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The electron beam induced functionalization of graphene through the formation of covalent bonds between free radicals of polyaromatic molecules and C=C bonds of pristine graphene surface has been explored using first principles calculations and high-resolution transmission electron microscopy. We show that the energetically strongest attachment of the radicals occurs along the armchair direction in graphene to carbon atoms residing in different graphene sub-lattices. The radicals tend to assume vertical position on graphene substrate irrespective of direction of the bonding and the initial configuration. The "standing up" molecules, covalently anchored to graphene, exhibit two types of oscillatory motion bending and twisting - caused by the presence of acoustic phonons in graphene and dispersion attraction to the substrate. The theoretically derived mechanisms are confirmed by near atomic resolution imaging of individual perchlorocoronene (C24Cl12) molecules on graphene. Our results facilitate the understanding of controlled functionalization of graphene employing electron irradiation as well as mechanisms of attachment of impurities via the processing of graphene nanoelectronic devices by electron beam lithography.
引用
收藏
页码:2711 / 2719
页数:9
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