An investigation of the optical spectra and EPR parameters of vanadium in III-V semiconductors (GaAs, GaP, InP)

被引：7
作者：
Chen, JJ [1 ]
Du, ML
机构：
[1] Sichuan Teachers Coll, Dept Phys, Nanchong 637002, Peoples R China
[2] CCAST, World Lab, Beijing 100080, Peoples R China
[3] SW Univ National, Dept Phys, Chengdu 610041, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 2000年 / 291卷 / 3-4期
基金：
中国国家自然科学基金;
关键词：
crystal- and ligand-field theory; optical spectra; gyromagnetic factor; V3+; GaAs; GaP; InP;
D O I：
10.1016/S0921-4526(99)02278-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
As there is strong covalence in III-V semiconductors, the effect of the difference between the t(2g) orbit and e(g) orbit must be considered in their electric structure. In this paper we present a modified Sugano-Tanabe scheme and give the energy matrix of the d(2) system and the g-factor formula of (3)A(2) ground state including different covalency. Using the matrix and the g-factor formula, we have calculated the optical spectra and the gyromagnetic factor of V3+ in GaAs, GaP and InP with the T-d system. The calculated results agree with experimental findings. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：270 / 274
页数：5
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