Plasma assisted metal-organic chemical vapor deposition of hard chromium nitride thin film coatings using chromium(III) acetylacetonate as the precursor

被引：23

作者：

Dasgupta, A ^{[1
]}

Kuppusami, P

Lawrence, F

Raghunathan, VS

Premkumar, PA

Nagaraja, KS

机构：

[1] Indira Gandhi Ctr Atom Res, Mat Characterizat Grp, Phys Met Sect, Kalpakkam 603102, Tamil Nadu, India

[2] Loyola Coll, Dept Chem, Madras 600034, Tamil Nadu, India

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2004年 / 374卷 / 1-2期

关键词：

metal-organic chemical vapor deposition (MOCVD); plasma processing; hard coatings; nitrides; surface morphology; X-ray diffraction;

D O I：

10.1016/j.msea.2004.03.021

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A new technique has been developed for depositing hard nanocrystalline chromium nitride (CrN) thin films on metallic and ceramic substrates using plasma assisted metal-organic chemical vapor deposition (PAMOCVD) technique. In this low temperature and environment-friendly process, a volatile mixture of chromium(III) acetylacetonate and either ammonium iodide or ammonium bifluoride were used as precursors. Nitrogen and hydrogen have been used as the gas precursors. By optimizing the processing conditions, a maximum deposition rate of similar to0.9 mum/h was obtained. A comprehensive characterization of the CrN films was carried out using X-ray diffraction (XRD), microhardness, and microscopy. The microstructure of the CrN films deposited on well-polished stainless steel (SS) showed globular particles, while a relatively smooth surface morphology was observed for coatings deposited on polished yittria- stabilized zirconia (YSZ). (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：362 / 368

页数：7

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