Influence of the GaN barrier thickness on the optical properties of InGaN/GaN multilayer quantum dot heterostructures

被引：17

作者：

Davies, S. C. ^{[1
]}

Mowbray, D. J. ^{[1
]}

Ranalli, F. ^{[2
]}

Wang, T. ^{[2
]}

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[2] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 25期

基金：

英国工程与自然科学研究理事会;

关键词：

electronic structure; gallium compounds; III-V semiconductors; indium compounds; multilayers; photoluminescence; quantum confined Stark effect; red shift; semiconductor quantum dots; wide band gap semiconductors; CHEMICAL-VAPOR-DEPOSITION; GROWTH;

D O I：

10.1063/1.3456392

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A study of InGaN/GaN multiple layer quantum dot (QD) structures with varying barrier thicknesses is reported. With increasing barrier thickness both a redshift in the photoluminescence (PL) peak energy and increase in the PL decay lifetime is observed. This is attributed to an increase in the size of the internal electric field and the influence on the electronic structure via the quantum confined Stark effect. Theoretical surface integral potential calculations support this interpretation. A minimum barrier thickness of 4 nm appears to be required for the formation of separate homogeneous QD layers. (C) 2010 American Institute of Physics. [doi:10.1063/1.3456392]

引用

页数：3

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