Detection of terahertz radiation with low-temperature-grown GaAs-based photoconductive antenna using 1.55 μm probe

被引：123

作者：

Tani, M ^{[1
]}

Lee, KS ^{[1
]}

Zhang, XC ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 09期

关键词：

D O I：

10.1063/1.1289914

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

THz radiation is detected by a low-temperature-grown GaAs (LT-GaAs) photoconductive antenna probed with a 1.55 mu m probe laser. The detection efficiency is found to be approximately 10% of that obtained with a 780 nm probe. From the nonquadratic dependence of photoconductivity on laser intensity, two-step photoabsorption mediated by midgap states in LT-GaAs is suggested, instead of the two-photon absorption, as the primary process for the photoconductivity. (C) 2000 American Institute of Physics. [S0003-6951(00)01335-8].

引用

页码：1396 / 1398

页数：3

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