Surface Defect Passivation and Energy Level Alignment Engineering with a Fluorine-Substituted Hole Transport Material for Efficient Perovskite Solar Cells

被引:32
|
作者
Tao, Li [1 ,2 ]
Wang, Biyi [1 ]
Wang, Haoxin [1 ]
Chen, Cheng [1 ]
Ding, Xingdong [1 ]
Tian, Yi [1 ]
Lu, Hongfei [2 ]
Yang, Xichuan [3 ]
Cheng, Ming [1 ]
机构
[1] Jiangsu Univ, Inst Energy Res, Key Lab Zhenjiang, Zhenjiang 212013, Jiangsu, Peoples R China
[2] Jiangsu Univ Sci & Technol, Sch Environm & Chem Engn, Zhenjiang 212003, Jiangsu, Peoples R China
[3] Dalian Univ Technol DUT, DUT KTH Joint Educ & Res Ctr Mol Devices, Inst Artificial Photosynth, State Key Lab Fine Chem, Dalian 116024, Liaoning, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
defect passivation; energy level regulation; hole transport material; stability; perovskite solar cell; HALIDE PEROVSKITES; STABILITY; ELECTRON; ENHANCEMENT; LENGTHS;
D O I
10.1021/acsami.0c21975
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The surface and boundary defects present in the perovskite film are reported to be nonradiative recombination and degradation centers, restricting further improvement of the power conversion efficiency (PCE) and long-term stability of perovskite solar cells. To address this problem, herein, we introduce a fluorine-substituted small molecular material 2FBTA-1 as a bifunctional buffer layer to efficiently passivate the surface defects of perovskite and tune the energy level alignment between the perovskite/2,2',7,7'-tetrakis(N, N-di-(p-methoxyphenyl)amino)-9,9'-spirobifluorene (Spiro-OMeTAD) interface. X-ray photoelectron spectroscopy shows that with the insertion of 2FBTA-1 between perovskite and Spiro-OMeTAD, the metallic Pb-0 defects and uncoordinated Pb2+ defects are well restricted. Consequently, the average PCE is distinctly improved from 18.4 +/- 0.51 to 20.3 +/- 0.40%. Moreover, the long-term stability of unencapsulated devices with 2FBTA-1 treatment under ambient conditions (relative humidity 40-60%) is effectively enhanced, retaining 87% of the initial efficiency after storage for 500 h.
引用
收藏
页码:13470 / 13477
页数:8
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